求一篇文章的IDS号

　　求一篇文章的IDS号。Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering
===有问必答===
IDS 号: 877FI
ISSN: 0169-4332

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Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering

入藏号: WOS:000299162300043
文献类型: Article
语种: English

出版商: ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Web of Science 类别: Chemistry, Physical; Materials Science, Coatings Films; Physics, Applied; Physics, Condensed Matter
研究方向: Chemistry; Materials Science; Physics
IDS 号: 877FI
ISSN: 0169-4332
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Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering
作者: Lin Cui; Hua-Yu Zhang; Gui-Gen Wang; Fang-Xu Yang; Xu-Ping Kuang; Rui Sun; Jie-Cai Han
来源出版物: Applied Surface Science 卷: 258期: 7页: 2479-85出版年: 15 Jan. 2012DOI: 10.1016/j.apsusc.2011.10.076
摘要: ZnO thin films were epitaxially grown on sapphire (0001) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800degC, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (002) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800degC in N 2. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (V O) and interstitial oxygen (O i). The biggest ratio of the PL intensity of UV emission to that of visible emission (INBE/IDLE) is observed from ZnO thin films annealed at 800degC in N 2. Therefore, we suggest that annealing temperature of 800degC and annealing atmosphere of N 2 are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance. [All rights reserved Elsevier].
入藏号: 12869464
文献类型: Journal Paper
语种: English
处理类型: Experimental
受控索引: annealing; atomic force microscopy; deep levels; II-VI semiconductors; interstitials; photoluminescence; semiconductor epitaxial layers; sputter deposition; tensile strength; texture; vacancies (crystal); wide band gap semiconductors; X-ray diffraction; zinc compounds
非受控索引: annealing; optical properties; structural properties; thin films; sapphire (0001) substrates; epitaxial growth; radio frequency magnetron sputtering; X-ray diffraction; XRD; atomic force microscopy; AFM; photoluminescence; polycrystalline hexagonal wurtzite structure; preferential c-axis orientation; tensile stress; near band edge emission; visible broad band emission; deep level emissions; oxygen vacancy; interstitial oxygen; temperature 800 degC; temperature 293 K to 298 K; ZnO; Al 2O 3
分类代码: A6170A Annealing processes; A6170B Interstitials and vacancies; A6820 Solid surface structure; A6855 Thin film growth, structure, and epitaxy; A7155G Impurity and defect levels in II-VI and III-V semiconductors; A7855E Photoluminescence in II-VI and III-V semiconductors; A7865K Optical properties of II-VI and III-V semiconductors (thin films/low-dimensional structures); A8115C Deposition by sputtering; B2550A Annealing processes in semiconductor technology; B4220 Luminescent materials; B0520B Sputter deposition; B2520D II-VI and III-V semiconductors
数值数据索引: temperature 1.07315E+03 K; temperature 2.93E+02 to 2.98E+02 K
化学物质索引: ZnO/bin Zn/bin O/bin; Al2O3/sur Al2/sur O3/sur Al/sur O/sur Al2O3/bin Al2/bin O3/bin Al/bin O/bin
国际专利分类: C09K11/00 Luminescent, e.g. electroluminescent, chemiluminescent, materials; C21D1/26 Methods of annealing; C23C14/34 Sputtering; H01L21/02 Manufacture or treatment of semiconductor devices or of parts thereof; H01L21/70 Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
作者地址: Lin Cui; Hua-Yu Zhang; Gui-Gen Wang; Fang-Xu Yang; Xu-Ping Kuang; Rui Sun; Jie-Cai Han; Shenzhen Grad. Sch., Harbin Inst. of Technol., Shenzhen, China.
出版商: Elsevier Science B.V., Netherlands
研究方向: Crystallography; Physics; Spectroscopy; Materials Science; Engineering; Optics (由 Thomson Reuters 提供)
参考文献数: 38
CODEN: ASUSEE
ISSN: 0169-4332
文献号: S0169-4332(11)01645-X